InAs based terahertz quantum cascade lasers
InAs based terahertz quantum cascade lasers
复制标题
InAs基太赫兹量子级联激光器
DOI：
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发表时间：
2016
期刊：
影响因子：
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通讯作者：
K. Unterrainer
中科院分区：
文献类型：
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作者：
M. Brandstetter;M. Kainz;T. Zederbauer;M. Krall;S. Schönhuber;H. Detz;W. Schrenk;A. M. Andrews;G. Strasser;K. Unterrainer
我们用InAs/AlAs0.16Sb0.84异质结实现了量子级联结构的太赫兹激光发射。由于有效电子质量较低，基于InAs的有源区有望提供比由GaAs或InGaAs组成的结构更高的光学增益。分子束外延的生长使有源区所需的单分子层厚的势垒得以制造，这是基于3势垒共振声子耗尽设计的。器件采用双金属波导几何结构处理，以确保高模式限制和低光学损耗。通过施加垂直于层状结构的磁场以抑制寄生散射通道，在液氦温度下观察到了3.8THz的激光发射。这些结果证明了基于InAs的有源区用于太赫兹量子级联激光器的可行性，有可能实现更高的工作温度。
We demonstrate terahertz lasing emission from a quantum cascade structure, realized with InAs/AlAs0.16Sb0.84 heterostructures. Due to the lower effective electron mass, InAs based active regions are expected to provide a higher optical gain compared to structures consisting of GaAs or InGaAs. The growth by molecular beam epitaxy enabled the fabrication of monolayer-thick barriers, required for the active region, which is based on a 3-well resonant phonon depletion design. Devices were processed in a double-metal waveguide geometry to ensure high mode confinement and low optical losses. Lasing emission at 3.8 THz was observed at liquid helium temperatures by applying a magnetic field perpendicular to the layered structure in order to suppress parasitic scattering channels. These results demonstrate the feasibility of InAs based active regions for terahertz quantum cascade lasers, potentially enabling higher operating temperatures.
影响因子：
3.8
作者：
Fathololoumi, S.;Dupont, E.;Liu, H. C.
通讯作者：
Liu, H. C.