Effect of Intentionally Formed `V-Defects' on the Emission Efficiency of GaInN Single Quantum Well
Effect of Intentionally Formed `V-Defects' on the Emission Efficiency of GaInN Single Quantum Well
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DOI：
10.1143/jjap.39.l569
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发表时间：
2000-06
影响因子：
1.5
通讯作者：
Hirokazu Takahashi;Atsuya Ito;Toshiyuki Tanaka;A. Watanabe;H. Ota;K. Chikuma
中科院分区：
文献类型：
--
作者：
Hirokazu Takahashi;Atsuya Ito;Toshiyuki Tanaka;A. Watanabe;H. Ota;K. Chikuma
研究了金属有机化学气相沉积技术在GaN衬底上故意形成的“V-缺陷”(六角坑)对GaN基单量子阱(SQW)发射效率的影响。我们研究了故意形成V缺陷的单量子阱的TD密度与光致发光强度之间的关系，并与强激发条件下正常单量子阱的关系进行了比较。结果表明，刻意形成的V-缺陷增加了发光强度，降低了光致发光强度对衬底GaN的TD密度的依赖关系。
We investigated the effect of `V-defects' (hexagonal pits), intentionally formed at threading dislocation (TD) sites, on the emission efficiency of GaInN-based single quantum well (SQW) grown on GaN by metalorganic chemical vapor deposition. We examined the relations between the TD densities and the photoluminescence intensities of the SQW in which V-defects were intentionally formed, comparing them with the relations for a normal SQW under strong excitation conditions. As a result, we demonstrated that the intentionally formed V-defects increase the luminescence intensity and reduce the dependence of photoluminescence (PL) intensity on the TD density of underlying GaN.