Optical spectroscopy of interlayer coupling in artificially stacked MoS2 layers
Optical spectroscopy of interlayer coupling in artificially stacked MoS2 layers
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DOI：
10.1088/2053-1583/2/3/034016
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发表时间：
2015-09
期刊：
影响因子：
5.5
通讯作者：
G. Plechinger;F. Mooshammer;A. Castellanos-Gomez;Gary A. Steele;Christian Schüller;T. Korn
中科院分区：
文献类型：
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作者：
G. Plechinger;F. Mooshammer;A. Castellanos-Gomez;Gary A. Steele;Christian Schüller;T. Korn
我们进行了光谱研究，以研究通过确定性转移过程从单个单层创建的不同人造 MoS2 双层和三层堆叠的特性。这些扭曲的双层和三层与矿物 MoS2 中常见的 2H 堆叠的不同之处在于相邻层的相对堆叠角度和层间距离。拉曼光谱、二次谐波显微镜和光致发光测量的结合使我们能够确定样品中的层间耦合程度。我们发现，即使对于电子解耦的人造结构（在低温下显示出与组成的 MoS2 单层相同的谷偏振度），各层之间也存在共振能量转移，这是一种有效的发光猝灭机制。
We perform an optical spectroscopy study to investigate the properties of different artificial MoS2 bi- and trilayer stacks created from individual monolayers by a deterministic transfer process. These twisted bi- and trilayers differ from the common 2H stacking in mineral MoS2 in the relative stacking angle of adjacent layers and the interlayer distance. The combination of Raman spectroscopy, second-harmonic-generation microscopy and photoluminescence measurements allows us to determine the degree of interlayer coupling in our samples. We find that even for electronically decoupled artificial structures, which show the same valley polarization degree as the constituent MoS2 monolayers at low temperatures, there is a resonant energy transfer between individual layers which acts as an effective luminescence quenching mechanism.