Structure and properties of computer-simulated fullerene-based ultralow-k dielectric materials
Structure and properties of computer-simulated fullerene-based ultralow-k dielectric materials
复制标题
计算机模拟富勒烯基超低k介电材料的结构和性能
DOI：
10.1103/physrevb.75.245430
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发表时间：
2007
影响因子：
3.7
通讯作者：
M. Taut
中科院分区：
文献类型：
--
作者：
K. Zagorodniy;H. Hermann;M. Taut
提出了具有超低介电常数和合理力学性能的未来微电子应用的绝缘材料。材料的结构是基于由桥分子连接的富勒烯。使用经典和量子理论方法来优化结构，并计算介电和力学性能。所得材料的（静态）介电常数k$和弹性体模量B$分别在$k=1.7$ ~ 2.2和$B=5$ ~ $23\phantom{\rule{0.3em}{0ex}}\mathrm{GPa}$范围内。
Insulating materials with ultralow dielectric constants and reasonable mechanical properties for future microelectronic applications are proposed. The structure of the materials is based on ${\mathrm{C}}_{60}$ fullerenes interconnected by bridge molecules. Classical and quantum-theoretical methods are used to optimize the structures and to calculate dielectric and mechanical properties. The (static) dielectric constants $k$ and elastic bulk moduli $B$ of the proposed materials are in the range of $k=1.7$ to 2.2 and $B=5$ to $23\phantom{\rule{0.3em}{0ex}}\mathrm{GPa}$, respectively.