Copper Precipitation on Dislocations in Silicon
Copper Precipitation on Dislocations in Silicon
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硅中位错的铜沉淀
DOI：
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发表时间：
1956
期刊：
影响因子：
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通讯作者：
W. C. Dash
中科院分区：
文献类型：
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作者：
W. C. Dash
用红外像管研究了铜扩散到硅晶体中形成的微晶。通过与蚀坑的相关性，线性聚集体被确定为位错。生长晶体中的位错通常是曲线型的。在塑性变形过程中形成的位错环由直线复合部分和纯螺旋部分组成，它们都位于110 °方向。螺旋位错上经常找不到复晶，当它们存在时，它们与复合材料上的复晶在细节上有所不同。可以看到相邻位错之间的相互作用。与复合位错或螺旋位错相关的蚀坑在形式上相似，表明通过所述技术在生长态晶体中形成的蚀坑识别了所有位错。位错环在晶体变形时从表面进入，具有相对较少的生长位错。位错环完全在晶体内形成，其模式与Frank‐Read机制的操作一致。
Precipitates formed by copper diffused into silicon crystals were studied by optical means using an infrared image tube. Linear aggregates are identified as dislocations by correlation with etch pits. Dislocations in as‐grown crystals are usually curvilinear. Dislocation loops formed during plastic deformation consist of straight‐line composite portions and pure screw portions, all of which lie in 〈110〉 directions. Precipitates frequently are not found on screw dislocations; when present they differ in detail from those on composites. Interactions between adjacent dislocations can be seen. Etch pits associated with either composite or screw dislocations are similar in form, indicating that the pits formed in as‐grown crystals by the technique described identify all the dislocations. Dislocation loops enter from the surface upon deformation of crystals with relatively few grown‐in dislocations. Dislocation loops formed entirely within the crystal in patterns consistent with operation of the Frank‐Read mech...