Growth of RuO2 nanorods in reactive sputtering
Growth of RuO2 nanorods in reactive sputtering
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反应溅射法生长 RuO2 纳米棒
DOI：
10.1063/1.2269180
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发表时间：
2006
影响因子：
4
通讯作者：
J. Gan
中科院分区：
文献类型：
--
作者：
Y. Lin;Chun;Chang;K. Cheng;J. Gan
这项工作演示了反应溅射合成 RuO2 纳米棒的方法。合成过程与金属有机化学气相沉积非常相似，不同之处在于使用高氧氩流量比（>5SCCM∕15SCCM）（SCCM表示STP下每分钟立方厘米）和高衬底温度（>300°C）下反应溅射生成的RuO3来代替金属有机前驱体。 RuO2 纳米棒往往以恒定的纵横比 (∼27) 稳定生长，并且场发射特性对其空间分布非常敏感。
The synthesis of RuO2 nanorods with reactive sputtering was demonstrated in this work. The synthesis process is very much like the metal organic chemical vapor deposition, except that RuO3 generated with reactive sputtering under high oxygen-to-argon flow ratio (>5SCCM∕15SCCM) (SCCM denotes cubic centimeter per minute at STP) and high substrate temperature (>300°C) is used in place of the metal organic precursor. RuO2 nanorods tend to grow steadily with constant aspect ratio (∼27) and the field-emission characteristics appear very sensitive to their spatial distribution.