Enhanced impurity incorporation by alternate Te and S doping in GaAs prepared by intermittent injection of triethylgallium and arsine in ultra high vacuum
Enhanced impurity incorporation by alternate Te and S doping in GaAs prepared by intermittent injection of triethylgallium and arsine in ultra high vacuum
复制标题
超高真空间歇注入三乙基镓和胂制备的 GaAs 中交替掺杂 Te 和 S 增强杂质掺入
DOI：
10.1016/s0022-0248(02)01784-0
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发表时间：
2002
影响因子：
1.8
通讯作者：
J. Nishizawa
中科院分区：
文献类型：
--
作者：
Y. Oyama;K. Tezuka;K. Suto;J. Nishizawa
