Field-Dependent Mobility of Highly Oriented Pentacene Thin-Film Transistors
Field-Dependent Mobility of Highly Oriented Pentacene Thin-Film Transistors
复制标题
高取向并五苯薄膜晶体管的场相关迁移率
DOI：
10.1143/jjap.41.2767
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发表时间：
2002
影响因子：
1.5
通讯作者：
A. Toriumi
中科院分区：
文献类型：
--
作者：
T. Komoda;Y. Endo;K. Kyuno;A. Toriumi
采用真空蒸发法制备并五苯薄膜。用x射线衍射和原子力显微镜对膜的结构特性进行了表征。从场相关迁移率的角度研究了并五苯薄膜晶体管的载流子输运特性。x射线衍射分析发现，适度热处理明显改善了薄膜的质量，但原子力显微镜和电学特性测量结果表明，热处理对薄膜质量的影响不大。因此，控制表面条件和薄膜生长的早期阶段是非常重要的。
Pentacene thin films were grown by vacuum evaporation method. The structural properties of the films were characterized by X-ray diffraction and atomic force microscopy. Carrier transport characteristics of pentacene thin film transistors were investigated in terms of the field-dependent mobility. It was found in X-ray diffraction analysis that moderate thermal treatment significantly improved the film quality, but little modification was observed under the atomic force microscope and the electrical characteristics measurement. Thus, it can be concluded that it is of great importance to control the surface conditions and the early stage of film growth.