A Selective-Area Metal Bonding InGaAsP–Si Laser
A Selective-Area Metal Bonding InGaAsP–Si Laser
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DOI：
10.1109/lpt.2010.2050683
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发表时间：
2010-05
影响因子：
2.6
通讯作者：
T. Hong;G. Ran;Ting Chen;Jiao-qing Pan;Wei-xi Chen;Yang Wang;Yuanbing Cheng;S. Liang;
中科院分区：
文献类型：
--
作者：
T. Hong;G. Ran;Ting Chen;Jiao-qing Pan;Wei-xi Chen;Yang Wang;Yuanbing Cheng;S. Liang;
采用选择性面积金属键合方法制备了1.55 μ m InGaAsP-Si杂化激光器。两个硅阻挡条纹，每个都有一个多余的金属容纳空间，被用来分隔光学耦合区和金属粘合区。在这种结构中，InGaAsP结构和Si波导之间的气隙已经减小到可以忽略不计。在脉冲波工作下，激光的阈值电流密度为1.7 kA/cm2，斜率效率为0.05 W/ a。实现了室温连续激光，最大输出功率为0.45 mW。
A 1.55-μ m hybrid InGaAsP-Si laser was fabricated by the selective-area metal bonding method. Two Si blocking stripes, each with an excess-metals accommodated space, were used to separate the optical coupling area and the metal bonding areas. In such a structure, the air gap between the InGaAsP structure and Si waveguide has been reduced to be negligible. The laser operates with a threshold current density of 1.7 kA/cm2 and a slope efficiency of 0.05 W/A under pulsed-wave operation. Room-temperature continuous lasing with a maximum output power of 0.45 mW is realized.