Contact resistance in graphene-based devices
Contact resistance in graphene-based devices
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DOI：
10.1016/j.physe.2009.11.080
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发表时间：
2010-02-01
影响因子：
3.3
通讯作者：
Tarucha, S.
中科院分区：
文献类型：
--
作者：
Russo, S.;Craciun, M. F.;Tarucha, S.
我们报告了一个系统的研究的总接触电阻存在于金属（Ti）和石墨烯层之间的界面上的不同，已知的厚度。通过比较在许多不同石墨烯薄片上制造的器件，我们证明了接触电阻由栅极独立部分和栅极依赖部分组成。我们表明，定量的接触电阻的栅极独立的部分是相同的单层，双层和三层石墨烯。我们认为，这是从金属的电荷转移的结果，导致费米能级在接触下的石墨烯区域移动远离电荷中性点。(C)2009爱思唯尔有限公司版权所有。
We report a systematic study of the total contact resistance present at the interface between a metal (Ti) and graphene layers of different, known thickness. By comparing devices fabricated on many different graphene flakes we demonstrate that the contact resistance consists of a gate independent and a gate dependent part. We show that quantitatively the gate independent part of the contact resistance is the same for single-, bi-, and tri-layer graphene. We argue that this is the result of charge transfer from the metal, causing the Fermi level in the graphene region under the contacts to shift far away from the charge neutrality point. (C) 2009 Elsevier B.V. All rights reserved.