PRESSURE-DEPENDENCE OF ENERGY-GAP IN SOME I-III-VI2 COMPOUND SEMICONDUCTORS
PRESSURE-DEPENDENCE OF ENERGY-GAP IN SOME I-III-VI2 COMPOUND SEMICONDUCTORS
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DOI：
10.1103/physrevb.14.3516
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发表时间：
1976-01-01
影响因子：
3.7
通讯作者：
MAINES, RG
中科院分区：
文献类型：
--
作者：
JAYARAMAN, A;NARAYANAMURTI, V;MAINES, RG
测量了四种三元半导体的吸收边随静压的变化。在所有情况下，能隙都随着压力的增加而增大。结果表明，AgGa S 2、CuGa S 2、AgGa Se2和AgIn Se2的能隙与压力的关系分别为2.2 meV/kbar、3.4 meV/kbar、5.3 meV/kbar和2.7 meV/kbar，并与相应的II-VI化合物进行了比较和讨论.本文描述和讨论了一些I-−-I-I-−-V-I2化合物和II-VI化合物的压力诱导相变的光学效应。
The shifts in the absorption edge with hydrostatic pressure have been measured for four ternary semiconductors. In all cases the energy gap increases with pressure. From the data the pressure dependence of the energy gap (d E g d P) was determined as 2.2 meV/kbar for AgGa S 2, 3.4 meV/kbar for CuGa S 2, 5.3 meV/kbar for AgGa Se 2, and 2.7 meV/kbar for AgIn Se 2. These shifts are compared with the corresponding II-VI compounds and discussed. Some optical effects associated with the pressure-induced phase transitions in some of the I− I I I− V I 2 compounds and II-VI compounds are described and discussed.