PHOTOINDUCED STRUCTURAL AND PHYSICOCHEMICAL CHANGES IN AMORPHOUS-CHALCOGENIDE SEMICONDUCTORS
PHOTOINDUCED STRUCTURAL AND PHYSICOCHEMICAL CHANGES IN AMORPHOUS-CHALCOGENIDE SEMICONDUCTORS
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DOI：
10.1080/13642818508240606
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发表时间：
1985-01-01
期刊：
影响因子：
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通讯作者：
EWEN, PJS
中科院分区：
文献类型：
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作者：
OWEN, AE;FIRTH, AP;EWEN, PJS
对硫化物玻璃中出现的各种光诱导现象进行了分类和描述，特别强调了光溶解效应。尽管在a-As2S3薄膜退火光变暗的情况下，拉曼实验表明，光诱导的键分布从化学有序网络的键分布向随机网络的一个特征的改变可能是主要原因，但其中许多过程的详细机制尚不清楚。本文给出了银在As-S薄膜中光溶解的新结果，结果表明，引发这一效应的光化辐射被光掺杂层吸收，靠近与硫系化合物薄膜未掺杂区域的界面。然而，造成这种影响的基本机制仍不清楚。
The various photo-induced phenomena that occur in chalcogenide glasses are classified and described, with particular emphasis on the photo-dissolution effect. The detailed mechanisms responsible for many of these processes are still unknown, although in the case of photo-darkening in annealed a-As2S3films, Raman experiments indicate that a light-induced change in the bond distribution from that for a chemically-ordered network towards one characteristic of a random network may be the principal cause. New results on the photo-dissolution of silver into As-S films are presented which indicate that the actinic radiation initiating the effect is absorbed in the photo-doped layer, close to the interface with the undoped region of the chalcogenide film. The basic mechanism responsible for the effect, however, is still not known.