Recovery of PMOSFET NBTI under different conditions
Recovery of PMOSFET NBTI under different conditions
复制标题
不同条件下PMOSFET NBTI的恢复
DOI：
10.1088/1674-1056/24/9/097304
复制
发表时间：
2015
影响因子：
1.7
通讯作者：
郝跃
中科院分区：
文献类型：
--
作者：
曹艳荣;杨毅;曹成;何文龙;郑雪峰;马晓华;郝跃
负偏压温度不稳定性（NBTI）已经成为严重的可靠性问题，界面陷阱和氧化物电荷在退化过程中起着重要作用。本文系统地研究了P型金属氧化物半导体场效应晶体管（PMOSFET）中NBTI在不同条件下的恢复现象，解释了各种恢复现象，并找到了恢复的可能过程。
Negative bias temperature instability (NBTI) has become a serious reliability issue, and the interface traps and oxide charges play an important role in the degradation process. In this paper, we study the recovery of NBTI systemically under different conditions in the P-type metal–oxide–semiconductor field effect transistor (PMOSFET), explain the various recovery phenomena, and find the possible processes of the recovery.