N-Polar GaN HEMTs Exhibiting Record Breakdown Voltage Over 2000 V and Low Dynamic On-Resistance
N-Polar GaN HEMTs Exhibiting Record Breakdown Voltage Over 2000 V and Low Dynamic On-Resistance
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DOI：
10.1109/led.2018.2834939
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发表时间：
2018-07-01
影响因子：
4.9
通讯作者：
Mishra, Umesh K.
中科院分区：
文献类型：
--
作者：
Koksaldi, Onur S.;Haller, Jeffrey;Mishra, Umesh K.
针对高压开关应用的氮极性（N-Polar）GaN高电子迁移率晶体管（HEMT）在通过金属有机化学气相沉积在蓝宝石衬底上生长的外延层上制造。器件表现出高击穿电压和低动态导通电阻的组合。在具有L-G = 1 μ m、L-GS = 1 μ m和L-GD = 28 μ m的晶体管上观察到超过2000 V的击穿电压。这些器件在V-GS = 1V时具有类似于575 mA/mm的漏极电流密度，并且比导通电阻（有源区）为4 m（10 Ω.mm）。Omega.cm动态导通电阻（R-ON）的特点是5 μ s后，该设备被打开，与高达575-V的关断状态应力。在V-DS，Q = 575 V时，动态R-ON类似于静态R-ON的1.4倍（增加40%）。这些晶体管在450-V应力下测量时显示出接近5%的超低动态R-ON。作为用于功率开关应用的N极GaN HEMT的首批演示之一，本信中讨论的器件实现了与文献中报道的最先进的Ga极GaN HEMT相当（并且在大多数情况下更好）的出色V-BR和动态R-ON性能。
Nitrogen polar (N-Polar) GaN high-electron-mobility transistors (HEMT) targeting high-voltage switching applications were fabricated on epi-layers grown by metal-organic chemical vapor deposition on sapphire substrates. Devices demonstrated a combination of high breakdown voltage and low dynamic ON-resistance. Breakdown voltages of over 2000 V were observed on transistors with L-G = 1 mu m, L-GS = 1 mu m, and L-GD = 28 mu m. These devices had a drain current density of similar to 575 mA/mm at V-GS = 1 V, and the specific ON-resistance (active-area) was 4 m Omega.cm(2) (10 Omega.mm). Dynamic ON-resistance (R-ON) was characterized 5 mu s after the device was turned ON, with up to 575-V OFF-state stress. At V-DS, Q = 575 V, the dynamic R-ON was similar to 1.4 times the static R-ON (40% increase). These transistors showed an ultra-low dynamic R-ON of similar to 5% when measuredat 450-V stress. As one of the first demonstrations of N-Polar GaN HEMTs for power switching applications, the devices discussed in this letter achieve excellent V-BR and dynamic R-ON performance comparable to (and in most cases better than) the state-of-the-art Ga-Polar GaN HEMTs reported in the literature.