Atomic Layer Deposition of Ruthenium Films from (Ethylcyclopentadienyl)(pyrrolyl)ruthenium and Oxygen
Atomic Layer Deposition of Ruthenium Films from (Ethylcyclopentadienyl)(pyrrolyl)ruthenium and Oxygen
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(乙基环戊二烯基)(吡咯基)钌和氧气原子层沉积钌薄膜
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发表时间：
2011
期刊：
影响因子：
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通讯作者：
M. Leskelä
中科院分区：
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作者：
K. Kukli;M. Kemell;Esa Puukilainen;J. Aarik;A. Aidla;T. Sajavaara;M. Laitinen;M. Tallarida;J. Sundqvist;M. Ritala;M. Leskelä
在275-350℃的温度范围内，以（乙基环戊二烯基）（吡罗基）钌和空气或氧气为前驱体，在hf蚀刻的Si、sio2、ZrO 2和TiN衬底上原子层沉积Ru薄膜。在长宽比为20:1的三维硅衬底上检测了适形生长。与其他基体相比，ZrO 2对Ru的成核作用最有效，但随着膜厚的增加，ZrO 2上的膜粗化速度更快。形成连续和导电金属层所需的最小循环次数可以通过增加氧脉冲的长度来减少。为了获得导电良好的Ru薄膜，必须在任何表面上生长到至少8 - 10nm的厚度。4-6 nm和10-15 nm厚薄膜的电阻率分别为30-60和14-16 μΩ·cm。在钌薄膜生长到10纳米或更高的厚度时，分层成为一个问题。
Ru films were grown by atomic layer deposition in the temperature range of 275―350°C using (ethylcyclopentadienyl)(pyrrolyl)ruthenium and air or oxygen as precursors on HF-etched Si, SiO 2 , ZrO 2 , and TiN substrates. Conformal growth was examined on three-dimensional silicon substrates with 20:1 aspect ratio. ZrO 2 promoted the nucleation of Ru most efficiently compared to other substrates, but the films roughened quickly on ZrO 2 with increasing film thickness. The minimum number of cycles required to form continuous and conductive metal layers could be decreased by increasing the length of the oxygen pulse. In order to obtain well-conducting Ru films growth to thicknesses of at least 8―10 nm on any surface was necessary. Resistivities in the ranges of 30―60 and 14―16 μΩ · cm were achieved for 4―6 and 10―15 nm thick films, respectively. Delamination became an issue in the Ru films grown to thicknesses about 10 nm and higher.