Characterization and estimated performance of commercial n+-p Ge APDs for long-wavelength optical receivers
Characterization and estimated performance of commercial n+-p Ge APDs for long-wavelength optical receivers
复制标题
用于长波长光接收器的商用 n -p Ge APD 的表征和估计性能
DOI：
--
复制
发表时间：
1981
期刊：
影响因子：
--
通讯作者：
M. Brain
中科院分区：
文献类型：
--
作者：
M. Brain
对于两个商业浅结n+-p锗APD，它是经验表明，光电流倍增和散粒噪声可以描述在很宽的波长范围内使用表达式推导出单载流子型注入。倍增的体漏电流及其相关的散粒噪声可以类似地描述，最接近的一致性来自于在最长波长λ 1.8μm处应用的光电流参数的使用。这些经验关系简化了使用Ge APD的光接收器灵敏度的估计。对于高达几百兆波特的比特率，Ge APD接收器的性能预计将低于高阻抗InGaAs pin FET混合电路，特别是在40-60° C范围内工作时。这两种替代方案在1001 Gbaud时具有竞争力，但Ge APD的偏置电压必须稳定在几百毫伏以内，并且必须对温度变化进行补偿。在采用无界视差编码系统的情况下，对于高达几百兆波特的比特率，包括具有跨导放大器的pin光电二极管的混合接收器仍应优于Ge APD。
For two commercial shallow-junction n+-p Ge APDs, it is shown empirically that the photocurrent multiplication and shot noise can be described over a wide range of wavelengths using expressions derived for single-carrier-type injection. Multiplied bulk leakage current and its associated shot noise may be similarly described, the closest agreement following from the use of photocurrent parameters applying at the longest wavelengths, ∼ 1.8μm. These empirical relationships simplify the estimation of optical receiver sensitivity using Ge APDs. For bit rates up to several hundred megabaud, the performance of Ge APD receivers is expected to be inferior to that demonstrated by the high-impedance InGaAs pin—FET hybrid, particularly where operation in the range 40–60° C is specified. The two alternatives become competitive at ∼ 1 Gbaud, but the bias voltage for the Ge APD must be stable within several hundred millivolts and must be compensated for variations in temperature. Where unbounded disparity coding systems are employed, a hybrid receiver comprising a pin photodiode with a transimpedance preamplifier should still outperform the Ge APD for bit rates up to several hundred megabaud.