Transport and magnetic properties of Fe3Si epitaxial films
Transport and magnetic properties of Fe3Si epitaxial films
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Fe3Si 外延薄膜的输运和磁性能
DOI：
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发表时间：
2008
期刊：
影响因子：
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通讯作者：
O. Schmidt
中科院分区：
文献类型：
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作者：
H. Vinzelberg;J. Schumann;D. Elefant;E. Arushanov;O. Schmidt
本文报道了用电子束蒸发法在GaAs衬底上外延生长的近化学计量比Fe_3Si薄膜的电阻率和磁化强度的测量结果。在低温电阻率的T3项被发现在所有的样品。像这样的术语被称为描述半金属材料中的异常单磁振子散射过程，并为我们的样品证实了Fe 3Si中半金属铁磁性的假设。薄膜在低磁场下表现出各向异性的磁电阻效应。在高磁场下，观察到负的纵向和横向磁阻（MR）线性依赖于磁场强度。在200 K附近，在约8 T的磁场下，MR显示最大绝对值，高达1.5%。由磁化强度测量得到磁矩为0.86μB/atom，接近于体相Fe_3Si的磁矩。
The paper presents resistivity and magnetization measurements on nearly stoichiometric Fe3Si films epitaxially grown on GaAs substrates by electron-beam evaporation in an ultrahigh vacuum chamber. In the low-temperature resistivity a T3 term was found in all samples. A term like that is known to describe the anomalous single-magnon scattering processes in half-metallic materials and confirms so for our samples the hypothesis of half-metallic ferromagnetism in Fe3Si. The films show an anisotropic magnetoresistance in low magnetic fields. In high magnetic fields a negative longitudinal and transverse magnetoresistance (MR) has been observed linearly depending on the field strength. In the vicinity of 200 K the MR shows maximum absolute values up to 1.5% at magnetic fields of about 8 T. From the magnetization measurements a magnetic moment of 0.86μB/atom was obtained, which is close to that of bulk Fe3Si.