Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in silicon
Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in silicon
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硅中 MeV Si、Ge 和 Sn 注入产生的二次缺陷的透射电子显微镜表征
DOI：
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发表时间：
2000
期刊：
影响因子：
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通讯作者：
D. Cockayne
中科院分区：
文献类型：
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作者：
J. Wong;S. Fatima;C. Jagadish;J. Gerald;C. Chou;J. Zou;D. Cockayne
在800 °C下退火15 min后，研究了通过离子注入到低于非晶化阈值的剂量在Si中产生的扩展缺陷。注入物种是IV族元素Si、Ge和Sn，并且比较了由类似损伤分布产生的结构缺陷。 注入离子的质量影响观察到的缺陷类型。对于所有三种注入物，观察到棒状{311}平面缺陷。此外，在Ge和Sn注入样品中，观察到小的{111}间隙位错环。
Extended defects created in Si by ion implantation to doses below the amorphization threshold have been studied after annealing at 800 °C for 15 min. The implant species were the group IV elements Si, Ge, and Sn, and structural defects created by similar damage distribution were compared. The mass of the implanted ion influences the type of defect observed. For all three implant species, rod-like {311} planar defects were observed. Additionally, in Ge and Sn implanted samples, small {111} interstitial faulted dislocation loops were observed.