Demonstration of a Dual-Band InAs/GaSb Type-II Superlattice Infrared Detector Based on a Single Heterojunction Diode
Demonstration of a Dual-Band InAs/GaSb Type-II Superlattice Infrared Detector Based on a Single Heterojunction Diode
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基于单个异质结二极管的双波段 InAs/GaSb II 型超晶格红外探测器的演示
DOI：
10.1109/jqe.2019.2961123
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发表时间：
2020-04-01
影响因子：
2.5
通讯作者：
Chen, Baile
中科院分区：
文献类型：
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作者：
Hao, Xiujun;Deng, Zhuo;Chen, Baile
我们提出并展示了一种基于金属有机化学气相沉积生长的 II 型 InAs/GaSb 超晶格的用于双波段检测的新型单异质结结构。该结构简单地由p型中波长接触层、n型中波长吸收层和n型长波长吸收层组成。在较小的反向偏压下，两个相邻吸收体之间的价带中势垒的存在使得中波长通道仅工作；在势垒不再存在的较高偏压下，长波长吸收器中的光生空穴能够传输通过中波长吸收器并到达p接触，使两个通道都工作。在-0.1 V和77 K下，中波长通道的50%截止波长为3.5 μm，暗电流密度为2.4x10(-9) A/cm(2)，峰值比探测率为1.4x10(13) cm.Hz(1/2) /W；在-0.3 V时，长波长通道的50%截止波长为8.0 μm，暗电流密度为5.1x10(-7) A/cm(2)，峰值比探测率为3.6x10(12) cm.Hz(1/2) /W。
We propose and demonstrate a new single heterojunction structure for dual-band detection based on typeII InAs/GaSb superlattices grown by metal-organic chemical vapor deposition. The structure simply consists of a p-type mid-wavelength contact layer, an n-type mid-wavelength absorber and an n-type long-wavelength absorber. At a small reverse bias, the presence of a potential barrier in the valence band between the two adjacent absorbers allows the mid-wavelength channel to work only; at a higher bias where the potential barrier no longer exists, photo-generated holes in the long-wavelength absorber are able to transport through the mid-wavelength absorber and reach the p-contact, making both channels to work. At -0.1 V and 77 K, the mid-wavelength channel exhibited a 50% cut-off wavelength of 3.5 mu m, a dark current density of 2.4x10(-9) A/cm(2), and a peak specific detectivity of 1.4x10(13) cm.Hz(1/2) /W; while at -0.3 V the long-wavelength channel exhibited a 50% cut-off wavelength of 8.0 mu m, a dark current density of 5.1x10(-7) A/cm(2), and a peak specific detectivity of 3.6x10(12) cm.Hz(1/2) /W.