Lithographically engineered shallow nitrogen-vacancy centers in diamond for external nuclear spin sensing
Lithographically engineered shallow nitrogen-vacancy centers in diamond for external nuclear spin sensing
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DOI：
10.1088/1367-2630/aad997
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发表时间：
2018-08
影响因子：
3.3
通讯作者：
R. Fukuda;P. Balasubramanian;I. Higashimata;Godai Koike;T. Okada;R. Kagami;T. Teraji;S. Onoda;M. Haruyama;Keisuke Yamada;M. Inaba;H. Yamano;F. M. Stürner;S. Schmitt;L. McGuinness;F. Jelezko;T. Ohshima;T. Shinada;H. Kawarada;W. Kada;O. Hanaizumi;T. Tanii;J. Isoya
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作者：
R. Fukuda;P. Balasubramanian;I. Higashimata;Godai Koike;T. Okada;R. Kagami;T. Teraji;S. Onoda;M. Haruyama;Keisuke Yamada;M. Inaba;H. Yamano;F. M. Stürner;S. Schmitt;L. McGuinness;F. Jelezko;T. Ohshima;T. Shinada;H. Kawarada;W. Kada;O. Hanaizumi;T. Tanii;J. Isoya
实现了对金刚石中带负电的氮空位（NV）中心的数量和位置的同时控制。虽然已知单个近表面NV中心在外部自旋传感方面表现出出色的能力，但数量和位置的准确性以及NV中心的一致性之间的权衡关系使得此类工程NV中心的使用变得困难。即，利用光刻技术的低能氮注入能够实现纳米级位置控制，但会导致生成率和相干性的降低。在本文中，我们表明，使用纳米掩模对富含 12C (99.95%) 的同质外延金刚石层进行低能氮离子注入，适用于以高创建良率创建具有足够长相干时间的浅 NV 中心，用于外部自旋传感。此外，NV中心排列成规则阵列，使得40％的晶格位点包含单个NV中心。使用各个 NV 中心的 XY8-k 测量表明，所创建的 NV 中心的深度为 2 至 12 nm，这与以 2.5 keV 注入的氮离子的停止范围相当。我们证明了位置控制的 NV 中心能够以超高空间分辨率进行外部自旋传感。
The simultaneous control of the number and position of negatively charged nitrogen-vacancy (NV) centers in diamond was achieved. While single near-surface NV centers are known to exhibit outstanding capabilities in external spin sensing, trade-off relationships among the accuracy of the number and position, and the coherence of NV centers have made the use of such engineered NV centers difficult. Namely, low-energy nitrogen implantation with lithographic techniques enables the nanoscale position control but results in degradation of the creation yield and the coherence property. In this paper, we show that low-energy nitrogen ion implantation to a 12C (99.95%)-enriched homoepitaxial diamond layer using nanomask is applicable to create shallow NV centers with a sufficiently long coherence time for external spin sensing, at a high creation yield. Furthermore, the NV centers were arranged in a regular array so that 40% lattice sites contain single NV centers. The XY8-k measurements using the individual NV centers reveal that the created NV centers have depths from 2 to 12 nm, which is comparable to the stopping range of nitrogen ions implanted at 2.5 keV. We show that the position-controlled NV centers are capable of external spin sensing with a ultra-high spatial resolution.