Trapping levels in TlGaSe2 single crystals
Trapping levels in TlGaSe2 single crystals
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TlGaSe2 单晶中的捕获能级
DOI：
10.1016/j.jallcom.2013.03.017
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发表时间：
2013
影响因子：
6.2
通讯作者：
Ş. Altındal
中科院分区：
文献类型：
--
作者：
S. Ozdemir;Ş. Altındal
用热激电流（TSC）技术研究了TlGaSe_2单晶中的电荷俘获中心。在恒定升温速率下测量了90 K至300 K温度范围内的TSC谱。测量结果表明，有几个捕获水平与光谱中重叠峰的复杂结构相关。TSC谱主要由204.1K和220.1K两个能级组成。实验结果表明，TlGaSe_2中的陷阱在测量温度范围内与光谱有关，符合单分子（一级）动力学。因此，通过使用计算机化的最佳拟合程序将光谱解析成一级形状的峰。计算了能深、随温度变化的频率因子和俘获截面等俘获参数以及相应的八个分立能级的浓度。这些中心都具有高捕获截面，能量为0.20eV、0.22eV、0.26eV、0.31eV、0.35eV、0.49eV、0.60eV和0.67eV，浓度较低，分别为8.9×1013、7.8×1013、1.1×1014、3.5×1013、4.4×1013、3.8×1013、9.8× 1014 cm-3和8.8× 1014 cm-3。
Charge trapping centers in TlGaSe2single crystals were investigated by the use of thermally stimulated current (TSC) technique. The measurements of TSC spectra in the temperature range from 90K to 300K were performed at a constant heating rate. The measurements showed that there are several trapping levels associated with the complex structure of overlapping peaks in the spectrum. The TSC spectra are dominated by two levels appeared at 204.1K and 220.1K. The experimental results indicate that the traps in TlGaSe2associated with the spectra in the measuring range of temperature obey the monomolecular (first order) kinetics. Thus, the spectra are resolved into first order shaped peaks by the use of computerized best fit procedure. The trapping parameters, such as the energy depth, temperature dependent frequency factor and capture cross section together with the concentrations of the corresponding eight discrete levels, are computed. These centers all having high capture cross sections are found to be at the energies of 0.20eV, 0.22eV, 0.26eV, 0.31eV, 0.35eV, 0.49eV, 0.60eV and 0.67eV with low concentrations of 8.9×1013, 7.8×1013, 1.1×1014, 3.5×1013, 4.4×1013, 3.8×1013, 9.8×1014and 8.8×1014cm−3, respectively.