Formation of metallic nanoclusters in oxygen deficient indium tin oxide films
Formation of metallic nanoclusters in oxygen deficient indium tin oxide films
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DOI：
10.1063/1.3596578
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发表时间：
2011-06
影响因子：
3.2
通讯作者：
J. Perrière;C. Hébert;A. Petitmangin;X. Portier;W. Seiler;M. Nistor
中科院分区：
文献类型：
--
作者：
J. Perrière;C. Hébert;A. Petitmangin;X. Portier;W. Seiler;M. Nistor
研究了在室温和真空条件下脉冲激光沉积氧化铟锡薄膜的组成、结构、微观结构和性能。薄膜具有高度的非化学计量性，约有20%的氧缺乏，并且在300至15 K之间表现出半导体行为，随后在7 K左右发生超导转变，这与嵌入在化学计量的氧化铟锡基体中的In或In- sn纳米团簇的存在有关，即通过缺氧亚稳态氧化铟锡的相分离形成纳米复合薄膜。在300 ~ 450 K范围内的电阻率测量证实了金属纳米团簇的固-液和液-固相变。室温下生长的薄膜部分结晶。实际上，在生长薄膜中观察到化学计量的氧化铟锡晶体。热处理（< 450 K）后，在纳米复合膜中观察到化学计量的氧化铟锡晶体和金属In的四方相。纳米团簇的大小（5 ~ 30 nm）取决于热处理和结晶，并通过HRTEM测量了纳米复合膜的微观结构。(C) 2011年美国物理研究所。(doi: 10.1063/1.3596578)
The composition, structure, microstructure, and properties of indium tin oxide films grown by pulsed laser deposition at room temperature and under vacuum were studied. The films are highly nonstoichiometric, with about 20% oxygen deficiency, and present a semiconductor behavior between 300 and 15 K, followed by a superconducting transition at about 7 K related to the presence of In or In-Sn nanoclusters embedded in a stoichiometric indium tin oxide matrix, i.e., nanocomposite films are formed by the phase separation of oxygen deficient metastable indium tin oxide. The solid-liquid and liquid-solid phase transitions of the metallic nanoclusters were evidenced by resistivity measurements in the 300 to 450 K range. The films grown at room temperature are partially crystallized. Actually, stoichiometric indium tin oxide crystallites are observed in the as grown films. After thermal treatment (< 450 K), both stoichiometric indium tin oxide crystallites and the tetragonal phase of the metallic In are observed in the nanocomposite films. The size of nanoclusters (from 5 to 30 nm), which depends on the thermal treatments and crystallization, and the microstructure of the nanocomposite films were confirmed by HRTEM measurements. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3596578]