Lattice parameter engineering for III–V long wave infrared photonics
Lattice parameter engineering for III–V long wave infrared photonics
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III-V 族长波红外光子学的晶格参数工程
DOI：
10.1049/el.2015.2572
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发表时间：
2015
影响因子：
1.1
通讯作者：
S. Suchalkin
中科院分区：
文献类型：
--
作者：
G. Belenky;YouXi Lin;L. Shterengas;D. Donetsky;G. Kipshidze;S. Suchalkin
本文报道了一种具有可控调制Sb成分和良好调节能带对准的含InAsSb层的变质周期异质结构的设计和制备。在任意Sb含量下，有序合金的带隙能远小于块状InAsSb。调制周期由在给定晶格常数的虚拟增益zsb衬底上生长的应变补偿InAsSb x /InAsSb y对的厚度决定。实验表明，调制周期从~ 2.3到~ 5.5 nm的偏差导致20k光致发光最大值从12.9µm偏移到19.6µm。结果表明，在虚拟衬底上生长应变补偿的InAsSb x /InAsSb y可以开发出具有不同带隙能量的窄带隙III-V材料。
The design and fabrication of metamorphic periodic heterostructures containing InAsSb layers with controllable modulated Sb composition and well-regulated band alignments are reported. The bandgap energy of ordered alloy can be much smaller than that in bulk InAsSb with any Sb content. The modulation period is determined by the thicknesses of the strain compensated InAsSb x /InAsSb y pairs grown on a virtual GaIn z Sb substrate with a given lattice constant. The experiment shows that the deviation of the modulation period from ∼2.3 to ∼5.5 nm leads to the shift of the maximum of 20 K photoluminescence from 12.9 to 19.6 µm. It is concluded that the growth of strain compensated InAsSb x /InAsSb y on virtual substrates allows developing narrow bandgap III–V materials with various bandgap energies.