Electrical characteristics of GaAs bonded to Si using SeS2 technique
Electrical characteristics of GaAs bonded to Si using SeS2 technique
复制标题
DOI：
10.1143/jjap.39.l911
复制
发表时间：
2000-09-15
期刊：
影响因子：
--
通讯作者：
Umeno, M
中科院分区：
文献类型：
--
作者：
Arokiaraj, J;Okui, H;Umeno, M
我们发展了一种在硅衬底上键合砷化镓的新技术，称为化学处理表面改性。将硫化硒(SeS_2)与砷化镓复合处理后，可在较低的温度下和无重量的条件下实现砷化镓和硅之间的强熔合。在室温下测量了n-GaAs/n-Si和p-GaAs/p-Si的伏安特性。当用SES_2键合时，由于界面处形成了一个高阻层，因此没有显示出整流的I-V曲线。在键合过程中，在SES2中加入少量的锡，大大改善了材料的性能。除Ga-Se和Se-S外，Sn还形成局域岛，并在Ga As和Si之间起分流电阻的作用。
We have developed a new technique for bonding GaAs on Si susbtrates; called surface modification by chemical treatment. The treatment of selenium sulphide (SeS2) with GaAs produces a reconstructed surface which helps in strong fusion between GaAs and Si at lower temperatures and without weights. The current-voltage (I-V) characteristics of both n-GaAs/n-Si and p-GaAs/p-Si were measured at room temperature. The I-V curve did not show a rectifying behaviour when GaAs was bonded to Si with SeS2 because of the formation of a high-resistance layer at the interface. The characteristics were greatly improved by small additions of Sn to SeS2 during the bonding process. Sn forms localized islands in addition to the Ga-Se and Se-S, and acts as shunt resistance between GaAs and Si.