FABRICATION AND CHARACTERIZATION OF COLD ELECTRON EMITTER BASED ON NANOCRYSTALLINE SILICON DOTS
FABRICATION AND CHARACTERIZATION OF COLD ELECTRON EMITTER BASED ON NANOCRYSTALLINE SILICON DOTS
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基于纳米晶硅点的冷电子发射器的制备与表征
DOI：
10.1557/proc-638-f5.9.1
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发表时间：
2000
期刊：
影响因子：
--
通讯作者：
S. Oda
中科院分区：
文献类型：
--
作者：
K. Nishiguchi;Xinwei Zhao;S. Oda
用纳米晶硅（nc-Si）点制作了冷电子发射器。Nc-Si点通过甚高频（VHF）等离子体增强化学气相沉积（CVD）在气相中形成。电子在电场的加速下，通过nc-Si和SiO2进行弹道输运，然后被抽入真空。通过改变nc-Si膜厚度、表面粗糙度和短时间热氧化来优化电子发射效率。
A cold electron emitter has been made from nanocrystalline silicon (nc-Si) dots. Nc-Si dots are formed in the gas phase by very-high-frequency (VHF) plasma enhanced chemical vapor deposition (CVD). Electrons, accelerated by electric field, are ballistically transported through nc-Si and SiO2, then extracted into vacuum. Electron emission efficiency is optimized through varying nc-Si film thickness, surface roughness, and by short thermal oxidation.