MBE growth of InAsN on (100) InAs substrates
MBE growth of InAsN on (100) InAs substrates
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InAsN 在 (100) InAs 基底上的 MBE 生长
DOI：
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发表时间：
2005
期刊：
影响因子：
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通讯作者：
J. Harmand
中科院分区：
文献类型：
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作者：
V. Sallet;L. Largeau;O. Mauguin;L. Travers;J. Harmand
研究了分子束外延技术在(100)InAs衬底上生长InAsN的过程。并与在GaAsN衬底上生长的GaAsN作了比较。在相同条件下，系统地测量了InAsN中较低的氮含量。在这两种情况下，氮的掺入都随着提供给表面的砷通量的减少而增加，而InAsN和GaAsN中测得的氮浓度随着生长温度的变化呈现相反的趋势。对于GaAsN，随着生长温度从360°C升高到460°C，N含量略有增加；而对于InAsN合金，在420-460℃范围内没有观察到明显的N含量，需要将生长温度降低到370℃才能在InAsN中加入1%的氮。二元组分的生成热能的比较有助于理解这些行为。下面的讨论讨论了GaInAsN材料中N原子的局部环境。(2015Wiley-VCH Verlag GmbH&Co.KGaA，Weinheim)
The growth of InAsN on (100) InAs substrates by molecular beam epitaxy is investigated. The incorporation of nitrogen in the alloy is compared with the case of GaAsN grown on GaAs. Under the same conditions, lower nitrogen contents are systematically measured in InAsN. In both cases, nitrogen incorporation was found to be enhanced with the decrease of the arsenic flux supplied to the surface, whereas the nitrogen concentrations measured in InAsN and GaAsN as a function of the growth temperature follow opposite tendencies. For GaAsN, the N content slightly increases as the growth temperature raises from 360 °C to 460 °C. On the contrary, for InAsN alloys, no significant amount of N is observed over the range 420–460 °C and a decrease of the growth temperature down to 370 °C is required to incorporate 1% of nitrogen in InAsN. The comparison of formation enthalpies of binary constituents enables to understand these behaviours. A following discussion addresses the local environment of N atoms in GaInAsN materials. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)