O-band electrically injected quantum dot micro-ring lasers on on-axis (001) GaP/Si and V-groove Si.
O-band electrically injected quantum dot micro-ring lasers on on-axis (001) GaP/Si and V-groove Si.
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DOI：
10.1364/oe.25.026853
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发表时间：
2017-10
期刊：
影响因子：
3.8
通讯作者：
Y. Wan;D. Jung;J. Norman;C. Shang;Ian MacFarlane;Qiang Li;M. Kennedy;A. Gossard;K. Lau;J. Bowers
中科院分区：
文献类型：
--
作者：
Y. Wan;D. Jung;J. Norman;C. Shang;Ian MacFarlane;Qiang Li;M. Kennedy;A. Gossard;K. Lau;J. Bowers
我们报道了直接生长在同轴(001)GaP/Si和V型沟槽(001)Si衬底上的InAs量子点(QD)微环的激光特性的统计比较。外环半径为50µm、环宽为4μm的GaP/Si模板的连续波阈值低至3 mA，高温工作温度超过80℃；而外环半径为5-μm、环宽为3-μm的V型槽模板的阈值为0.6 mA。在一次重要的取样分析中，我们还对在天然的砷化镓衬底上同时制造的器件进行了评估。总体评估突出了在探索在工业标准硅衬底上进行低阈值激光的最佳外延方案方面的引人注目的见解。
We report statistical comparisons of lasing characteristics in InAs quantum dot (QD) micro-rings directly grown on on-axis (001) GaP/Si and V-groove (001) Si substrates. CW thresholds as low as 3 mA and high temperature operation exceeding 80 °C were simultaneously achieved on the GaP/Si template template with an outer-ring radius of 50 µm and a ring width of 4 μm, while a sub-milliamp threshold of 0.6 mA was demonstrated on the V-groove Si template with a smaller cavity size of 5-μm outer-ring radius and 3-μm ring width. Evaluations were also made with devices fabricated simultaneously on native GaAs substrates over a significant sampling analysis. The overall assessment spotlights compelling insights in exploring the optimum epitaxial scheme for low-threshold lasing on industry standard Si substrates.