Lattice-matched AlInN/GaN multi-channel heterostructure and HEMTs with low on-resistance
Lattice-matched AlInN/GaN multi-channel heterostructure and HEMTs with low on-resistance
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DOI：
10.1063/5.0063638
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发表时间：
2021-09
影响因子：
4
通讯作者：
Ang Li;Chong Wang;Shengrui Xu;Xuefeng Zheng;Yunlong He;Xiao-hua Ma;Xiaoli Lu;Jinfeng Zhang;Kai Liu;Yaopeng Zhao;Yue Hao
中科院分区：
文献类型：
--
作者：
Ang Li;Chong Wang;Shengrui Xu;Xuefeng Zheng;Yunlong He;Xiao-hua Ma;Xiaoli Lu;Jinfeng Zhang;Kai Liu;Yaopeng Zhao;Yue Hao
本文报道了一种基于晶格匹配AlInN/GaN的高性能多沟道异质结。五个异质结的堆叠产生了3.67 × 1013 cm−2的高二维电子气密度和74.5 Ω/sq的小薄层电阻（RSH）。与具有相同异质结数的AlGaN/GaN样品相比，AlInN/GaN样品的RSH降低了51.2%。由于AlInN阻挡层和GaN沟道是晶格匹配的，因此可以减轻压电应变引起的应变缺陷。高分辨X射线衍射结果表明，AlInN/GaN多沟道中的位错密度降低了18.9%。建立了多沟道异质结的计算模型，研究了多沟道异质结的电子布居和能带图，计算结果与实验结果基本一致。当栅漏间距为11.5 μm时，器件的导通电阻（罗恩）仅为2.26 Ω mm，表明晶格匹配的多沟道AlInN/GaN异质结构可以显著提高器件的电流驱动效率，改善器件的输出性能。
In this paper, a high-performance multi-channel heterostructure based on lattice-matched AlInN/GaN has been reported. The stacking of five heterostructures yields a high two-dimensional electron gas density of 3.67 × 1013 cm−2 and a small sheet resistance (RSH) of 74.5 Ω/sq. Compared with the AlGaN/GaN sample with the same number of heterojunctions, the AlInN/GaN sample reduces the RSH by 51.2%. Since the AlInN barrier and GaN channel are lattice-matched, the strain defects caused by piezoelectric strain can be alleviated. The high-resolution x-ray diffraction results show that the total dislocation density in AlInN/GaN multi-channels is reduced by 18.9%. The calculation models of multiple-channel heterostructures are obtained to investigate the electron population and energy band diagram, and the calculated results are roughly consistent with the experimental results. With a gate–drain spacing of 11.5 μm, the on-resistance (RON) of the AlInN/GaN multi-channel HEMT was only 2.26 Ω mm, indicating that the lattice-matched multi-channel AlInN/GaN heterostructure can substantially enhance the current drive efficiency and improve the output performance of the devices.