Compact All-Quantum-Dot-Based Tunable THz Laser Source
Compact All-Quantum-Dot-Based Tunable THz Laser Source
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DOI：
10.1109/jstqe.2016.2633870
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发表时间：
2017-07-01
影响因子：
4.9
通讯作者：
Rafailov, Edik U.
中科院分区：
文献类型：
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作者：
Fedorova, Ksenia A.;Gorodetsky, Andrei;Rafailov, Edik U.
我们展示了一个超紧凑的，室温，可调谐太赫兹（THz）激光源的基础上的差频驱动的光混频在共面带状线InAs/GaAs量子点（QD）天线泵浦的宽调谐，高功率，连续波InAs/GaAsQD激光二极管在双光栅准Littrow配置。工作在1150-1301 nm波长范围内的双波长量子点激光器的最大输出功率为280 mW，并具有可调谐的差频（277 GHz至30 THz）被用来实现可调谐的太赫兹产生的量子点天线的光电导间隙为50 μ m。在InAs/GaAs量子点的第一激发态附近的泵浦波长（类似于1160 nm）处观察到最佳的THz输出性能，其中在0.83 THz处的最大输出功率为0.6 nW。
We demonstrate an ultracompact, room temperature, tunable terahertz (THz) generating laser source based on difference-frequency-driven photomixing in a coplanar stripline InAs/GaAs quantum-dot (QD) antenna pumped by a broadly tunable, high power, continuous wave InAs/GaAsQD laser diode in the double-grating quasi-Littrow configuration. The dual-wavelength QD laser operating in the 1150-1301 nm wavelength region with a maximum output power of 280 mW and with tunable difference-frequency (277 GHz to 30 THz) was used to achieve tunable THz generation in the QD antenna with a photoconductive gap of 50 mu m. The best THz output performance was observed at pump wavelengths around the first excited state of the InAs/GaAs QDs (similar to 1160 nm), where a maximum output power of 0.6 nW at 0.83 THz was demonstrated.