Enhanced stability of the HfO2 electrolyte and reduced working voltage of a CB-RAM by an ionic liquid
Enhanced stability of the HfO2 electrolyte and reduced working voltage of a CB-RAM by an ionic liquid
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DOI：
10.1039/c5tc01127b
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发表时间：
2015-07
影响因子：
6.4
通讯作者：
A. Harada;Hiroki Yamaoka;R. Ogata;K. Watanabe;K. Kinoshita;S. Kishida;T. Nokami;T. Itoh
中科院分区：
文献类型：
--
作者：
A. Harada;Hiroki Yamaoka;R. Ogata;K. Watanabe;K. Kinoshita;S. Kishida;T. Nokami;T. Itoh
在由Cu/HfO2/Pt组成的导电桥随机存取存储器的HfO2薄膜上加入微量离子液体[bmim][Tf2N]，其中含有5000ppm的H2O，可以提高存储器性能的效率：降低工作电压和防止电解液的破坏。
Supplying a trace volume of ionic liquid, [bmim][Tf2N], which contains 5000 ppm of H2O, on the HfO2 film in the conducting-bridge random access memory composed of Cu/HfO2/Pt allows improved efficiency of the memory properties: reduction of operating voltage and prevention of destruction of the electrolyte.