A van der Waals Ferroelectric Tunnel Junction for Ultrahigh‐Temperature Operation Memory
A van der Waals Ferroelectric Tunnel Junction for Ultrahigh‐Temperature Operation Memory
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DOI：
10.1002/smtd.202101583
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发表时间：
2022-02
期刊：
影响因子：
12.4
通讯作者：
Wenhui Tang;Xiankun Zhang;Huihui Yu;L. Gao;Qinghua Zhang;Xiao Wei;Mengyu Hong;Lin Gu
中科院分区：
文献类型：
--
作者：
Wenhui Tang;Xiankun Zhang;Huihui Yu;L. Gao;Qinghua Zhang;Xiao Wei;Mengyu Hong;Lin Gu
面对不断缩小的尺寸和日益严重的自热效应，开发对热不敏感的铁电器件对未来电子学至关重要。然而，传统的铁电材料和大多数2D铁电材料（2DFM）由于其低居里温度而不适合于高温操作。在这里，通过使用具有高居里温度的特殊2DFM（少层α-In 2Se 3），构建了在室温和高温下都具有出色和可靠性能的货车范德华（vdW）铁电隧道结（FTJ）存储器。vdW FTJ在室温下提供104的大开/关比，并且在470 K的低温下仍然显示出优异的开/关比，这将使其他2DFM失效。此外，在高温下实现了长保持和可靠的循环耐久性，显示了vdW FTJ存储器的稳健的热稳定性。这项工作的观察结果表明，α-In 2Se 3在自热或恶劣环境中的高温可靠服务方面具有令人兴奋的前景。
Facing the constant scaling down and thus increasingly severe self‐heating effect, developing ultrathin and heat‐insensitive ferroelectric devices is essential for future electronics. However, conventional ultrathin ferroelectrics and most 2D ferroelectric materials (2DFMs) are not suitable for high‐temperature operation due to their low Curie temperature. Here, by using few‐layer α‐In2Se3, a special 2DFM with high Curie temperature, van der Waals (vdW) ferroelectric tunnel junction (FTJ) memories that deliver outstanding and reliable performance at both room and high temperatures are constructed. The vdW FTJs offer a large on/off ratio of 104 at room temperature and still reveal excellent on/off ratio at an ultrahigh temperature of 470 K, which will fail down other 2DFMs. Moreover, long retention and reliable cyclic endurance at high temperature are achieved, showing robust thermal stability of the vdW FTJ memory. The observations of this work demonstrate an exciting promise of α‐In2Se3 for reliable service in high temperature either from self‐heating or harsh environments.