High-Critical-Current-Density Epitaxial Films of SmBa2Cu3O7-x in High Fields
High-Critical-Current-Density Epitaxial Films of SmBa2Cu3O7-x in High Fields
复制标题
高场高临界电流密度 SmBa2Cu3O7-x 外延薄膜
DOI：
10.1143/jjap.44.l129
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发表时间：
2005
影响因子：
1.5
通讯作者：
Y. Takai
中科院分区：
文献类型：
--
作者：
Y. Yoshida;K. Matsumoto;Y. Ichino;M. Itoh;A. Ichinose;S. Horii;M. Mukaida;Y. Takai
报道了SmBa_2Cu_3O_（7-x）（SmBCO）外延薄膜的临界电流密度（Jc）和不可逆场（Birr）。通过脉冲激光沉积在MgO（100）衬底上沉积的这些薄膜的Birr和Jc严重依赖于衬底温度。在高衬底温度下生长的SmBCO籽晶层使我们能够在相对较低的温度下获得完全c轴取向的SmBCO薄膜，从而在5 T和77 K下获得B_c的1.7 ×105 A/cm ~ 2的高Jc。该值与优化NbTi超导线材在5 T和4.2K下获得的值一样高。
The critical current density (Jc) and irreversibility field (Birr) of epitaxial SmBa2Cu3O7-x (SmBCO) films are reported. The Birr and Jc of these films deposited on MgO(100) substrates by pulsed-laser deposition depend critically on the substrate temperature. The use of a thin SmBCO seed layer grown at a high substrate temperature enabled us to obtain fully c-axis-oriented SmBCO films at relatively low temperatures, resulting in a high Jc of 1.7 ×105 A/cm2 of B ∥c at 5 T and 77 K. This value is as high as that of the optimized NbTi superconducting wires achieved at 5 T and 4.2 K.