Effects of buffer layers on the structural and electronic properties of InSb films
Effects of buffer layers on the structural and electronic properties of InSb films
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DOI：
10.1063/1.1841466
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发表时间：
2005-01
影响因子：
3.2
通讯作者：
X. Weng;N. Rudawski;P. T. Wang;R. Goldman;D. L. Partin;J. Heremans
中科院分区：
文献类型：
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作者：
X. Weng;N. Rudawski;P. T. Wang;R. Goldman;D. L. Partin;J. Heremans
我们研究了不同缓冲层对n掺杂InSb薄膜结构和电子性能的影响。我们发现，与直接在GaAs上生长的InSb薄膜相比，在低错配的GaSb缓冲液上生长的InSb薄膜的室温电子迁移率显著降低，而在高错配的InAlSb或阶梯渐变的GaSb+InAlSb缓冲液上生长的InSb薄膜的室温电子迁移率显著增加。透射电镜（TEM）显示，与直接生长在砷化镓上的InSb薄膜相比，在低错配缓冲层上生长的InSb薄膜的位错密度显著增加，而在高错配缓冲层或阶梯渐变缓冲层上生长的InSb薄膜的位错密度显著降低。横截面透射电镜揭示了薄膜/缓冲层界面在低错配（高错配和阶梯渐变）缓冲层螺纹位错成核（过滤）中的作用。电子迁移率和载流子浓度的定量分析
We have investigated the effects of various buffer layers on the structural and electronic properties of n-doped InSb films. We find a significant decrease in room-temperature electron mobility of InSb films grown on low-misfit GaSb buffers, and a significant increase in room-temperature electron mobility of InSb films grown on high-misfit InAlSb or step-graded GaSb+InAlSb buffers, in comparison with those grown directly on GaAs. Plan-view transmission electron microscopy (TEM) indicates a significant increase in threading dislocation density for InSb films grown on the low-misfit buffers, and a significant decrease in threading dislocation density for InSb films grown on high-misfit or step-graded buffers, in comparison with those grown directly on GaAs. Cross-sectional TEM reveals the role of the film/buffer interfaces in the nucleation (filtering) of threading dislocations for the low-misfit (high-misfit and step-graded) buffers. A quantitative analysis of electron mobility and carrier-concentration de...