Oxide heterostructure resistive memory.
Oxide heterostructure resistive memory.
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DOI：
10.1021/nl401287w
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发表时间：
2013-06
期刊：
影响因子：
10.8
通讯作者：
Yuchao Yang;Shinhyun Choi;W. Lu
中科院分区：
文献类型：
--
作者：
Yuchao Yang;Shinhyun Choi;W. Lu
电阻开关器件被广泛认为是未来存储器和逻辑应用的有希望的候选者。在这里，我们表明，通过使用多层氧化物异质结构的开关特性可以系统地控制，范围从单极开关到互补开关和双极开关的线性和非线性导通状态和高耐久性。在电阻切换过程中，每一层都可以针对特定功能进行调整，从而大大提高了控制程度和灵活性，从而优化了器件性能。
Resistive switching devices are widely believed as a promising candidate for future memory and logic applications. Here we show that by using multilayer oxide heterostructures the switching characteristics can be systematically controlled, ranging from unipolar switching to complementary switching and bipolar switching with linear and nonlinear on-states and high endurance. Each layer can be tailed for a specific function during resistance switching, thus greatly improving the degree of control and flexibility for optimized device performance.