Large area tunnel oxide passivated rear contact n‐type Si solar cells with 21.2% efficiency
Large area tunnel oxide passivated rear contact n‐type Si solar cells with 21.2% efficiency
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DOI：
10.1002/pip.2739
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发表时间：
2016-06
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影响因子：
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通讯作者：
Yuguo Tao;V. Upadhyaya;Chia-Wei Chen;A. Payne;E. Chang;A. Upadhyaya;A. Rohatgi
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文献类型：
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作者：
Yuguo Tao;V. Upadhyaya;Chia-Wei Chen;A. Payne;E. Chang;A. Upadhyaya;A. Rohatgi
本文报道了用于高效丝网印刷大面积n型前结晶体硅太阳电池的载流子选择隧道氧化层钝化后接触的实现。结果表明，在室温(25℃)硝酸中生长的n+多晶硅层覆盖的隧道氧化物具有良好的背接触钝化性能，其背表面场区的开路电压iVoc为714 mV，饱和电流密度j0b‘为10.3FA/cm2。对于后端高温工艺，还研究了这种钝化方案的耐久性。结合离子注入的Al_2O_3钝化的硼发射体和丝网印刷的正面金属栅极，这种钝化的背面接触使239 cm2商业级n型Czochralski晶片上的正面结硅太阳能电池的效率达到21.2%。版权所有©2016 John Wiley&Sons，Ltd.
This paper reports on the implementation of carrier‐selective tunnel oxide passivated rear contact for high‐efficiency screen‐printed large area n‐type front junction crystalline Si solar cells. It is shown that the tunnel oxide grown in nitric acid at room temperature (25°C) and capped with n+ polysilicon layer provides excellent rear contact passivation with implied open‐circuit voltage iVoc of 714 mV and saturation current density J0b′ of 10.3 fA/cm2 for the back surface field region. The durability of this passivation scheme is also investigated for a back‐end high temperature process. In combination with an ion‐implanted Al2O3‐passivated boron emitter and screen‐printed front metal grids, this passivated rear contact enabled 21.2% efficient front junction Si solar cells on 239 cm2 commercial grade n‐type Czochralski wafers. Copyright © 2016 John Wiley & Sons, Ltd.