Patterning of layer-by-layer self-assembled multiple types of nanoparticle thin films by lithographic technique
Patterning of layer-by-layer self-assembled multiple types of nanoparticle thin films by lithographic technique
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DOI：
10.1021/nl0257521
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发表时间：
2002-11-01
期刊：
影响因子：
10.8
通讯作者：
Cui, T
中科院分区：
文献类型：
--
作者：
Hua, F;Shi, J;Cui, T
本文演示了一种在4英寸硅片上产生多种类型纳米颗粒的光刻方法。每种类型的纳米粒子都被精确地定向到所需的位置。该工艺主要基于传统的微电子技术，具有极高的重现性。这使得工业应用制造纳米晶体器件成为可能。首先在硅片上涂覆一层直径为150nm的聚苯乙烯球薄膜，并进行层层自组装，然后在薄膜上沉积一层铝。在铝表面纺上一层正极光刻胶，然后用平版印刷技术制出图案。通过湿法蚀刻去除未受保护的铝，直到下面的聚苯乙烯薄膜暴露在空气中。利用氧等离子体将聚苯乙烯薄膜一路蚀刻到硅表面。随后，另一种纳米颗粒的薄膜，直径为78 nm的二氧化硅颗粒，被一层一层的自组装吸附在表面上。最终，铝和光阻剂被去除，每种类型的纳米颗粒在设计图案时彼此相邻。使用扫描电子显微镜产生该图案的图像。
A lithographic approach to generate clean patterns of multiple types of nanoparticles on one 4-inch silicon wafer is demonstrated in this paper. Each type of nanoparticle is precisely directed to the desired location. The process is mainly based on conventional microelectronic techniques with extremely high reproducibility. This enables the possibility of industrial applications to fabricate devices made of nanocrystals. A thin film of polystyrene spheres, 150 nm in diameter, was first coated on the silicon wafer with layer-by-layer self-assembly, followed by a layer of aluminum deposited on the thin film. A layer of positive photoresist was spun on the surface of aluminum and then patterned by lithographic technique. The unprotected aluminum was removed by wet etching until the polystyrene thin film underneath was exposed to the air. Oxygen plasma was employed to etch the polystyrene thin film all the way to the silicon surface. Subsequently, a thin film of another type of nanoparticle, silica particle 78 nm in diameter, was adsorbed onto the surface with layer-by-layer self-assembly. Eventually, aluminum and photoresist were removed and each type of nanoparticle was located next to each other as the pattern was designed. A scanning electron microscope was used to produce the image of the pattern.