On-wafer small-signal and large-signal measurements up to sub-THz frequencies
On-wafer small-signal and large-signal measurements up to sub-THz frequencies
复制标题
高达亚太赫兹频率的晶圆上小信号和大信号测量
DOI：
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发表时间：
2014
期刊：
影响因子：
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通讯作者：
B. Tillack
中科院分区：
文献类型：
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作者：
V. Krozer;R. Doerner;F. Schmuckle;N. Weimann;W. Heinrich;A. Rumiantsev;M. Lisker;B. Tillack
MMIC技术的最新进展为电路在THz范围内工作提供了可能性。有许多BiCMOS和III-V族化合物器件技术的例子，其性能超过600 GHz。这种MMIC的表征主要在平面环境中的晶片上执行。然而，晶圆上表征设备在频率和功率方面不能完全跟上MMIC的发展。本文讨论了毫米波频率下的在片校准问题，这是精确测量和表征有源和无源器件的基础。随后，本文讨论了毫米波互连表征。低损耗互连线对于毫米波MMIC，特别是异构集成的情况下是非常重要的。最后，提出了一种新的异构集成方法的双极技术，使用BiCMOS和InP DHBT工艺。这种方法严重依赖于低损耗互连和精确的器件建模。它将被证明，准确的大信号模型可以有效地从校准良好的晶圆上的多偏置小信号测量提取，但验证是困难的，由于在毫米波频率的校准困难。
Recent advances in MMIC technology have opened the possibilities for circuit operation in the THz range. There are numerous examples of BiCMOS and III-V compound device technologies with demonstrated performance beyond 600 GHz. Characterization of such MMIC are predominantly performed on-wafer in a planar environment. However, on-wafer characterization facilities do not fully keep pace with MMIC development in terms of frequency and power. The paper discusses issues involved in on-wafer calibration at mm-wave frequencies, which is the basis for accurate measurements and characterization of active and passive device. Subsequently, the paper discusses mm-wave interconnect characterization. Low-loss interconnects are important for mm-wave MMIC, especially in case of heterogeneous integration. Finally, a novel heterogeneous integration approach of bipolar technologies, using both BiCMOS and InP DHBT processes is presented. This approach heavily relies on low-loss interconnects and accurate device modelling. It will be shown that accurate large-signal models can be efficiently extracted from well-calibrated on-wafer multi-bias small-signal measurements, but verification is difficult due to calibration difficulties at mm-wave frequencies.