Ion irradiation induced damage on multiwalled carbon nanotubes
Ion irradiation induced damage on multiwalled carbon nanotubes
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发表时间：
2010
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通讯作者：
M. Khanlary;R. Keshtmand;M. Mojtahedzadeh
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作者：
M. Khanlary;R. Keshtmand;M. Mojtahedzadeh
本文研究了不同能量和剂量的Ar+离子辐照产生的纳米管缺陷的拉曼光谱。为了获得更丰富的数据，增加了扫描电子显微镜和热重分析。样品的方块电阻率也用标准的四点探针法测量。结果表明，在1300 cm~(-1)附近的“D带”强度与1590 cm~(-1)的“G带”强度之比，D带与G带的相对强度随辐照剂量的增大而增大。将强度比ID‘/IG(D’带被分配给发生在石墨烯原子层内部的晶格缺陷，并导致2D平移对称性的破坏)与ID/IG进行比较，倾向于将D‘带视为缺陷。电学测量表明，样品的电阻随着辐照剂量的增加而增加，这显然是由于产生了更多的缺陷。
In this work the Raman spectroscopy investigation of nanotube defects created by irradiation of Ar + -ions with various energies and doses is presented. In order to get more informative data, SEM and TGA analysis was added. Sheet resistivity of samples also measured with standard four point probe technique. From the results, it is evident that the intensity ratio of "D band" at around 1300 cm -1 to the intensity of "G band" at 1590 cm -1 , relative intensity of D to G bands increases with enhancement of the irradiation dose. Comparing the intensity ratio ID'/IG (D ’ band is assigned to the lattice defects which occur inside the graphene atomic layer and induces a break in the 2D translational symmetry ) with ID/IG tend to decide D' band treated as a defect. Electrical measurements show that resistance of samples increases with enhancement of irradiation dose, clearly due to creation of more defects.