500 nm electrically driven InGaN based laser diodes
500 nm electrically driven InGaN based laser diodes
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DOI：
10.1063/1.3089573
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发表时间：
2009-02-23
影响因子：
4
通讯作者：
Strauss, Uwe
中科院分区：
文献类型：
--
作者：
Queren, Desiree;Avramescu, Adrian;Strauss, Uwe
基于最近对低缺陷密度富In InGaN量子阱生长的改进，我们展示了波长长达500 nm的电流驱动InGaN激光二极管。激光结构生长在c面GaN衬底上，并加工成宽绝缘条形激光二极管。我们讨论了在这种生长方向上压电场对长波激光二极管发射能量的影响。低阈值电流密度为8.2 kA/cm(2)与高斜率效率650 mW/A相结合，可实现高达数十毫瓦的高输出功率。
Based on recent improvements of growth of In-rich InGaN quantum wells with low defect density, we demonstrate current driven InGaN laser diodes at wavelengths as long as 500 nm. The laser structures are grown on c-plane GaN substrate and are processed as broad oxide-insulated stripe laser diodes. We discuss the impact of the piezoelectric field on the emission energy of long wavelength laser diodes for this growth orientation. The combination of low threshold current density of 8.2 kA/cm(2) with high slope efficiency of 650 mW/A enables high output powers up to several tens of milliwatts.