Preparation of ferromagnetic (In,Mn)As with a high Curie temperature of 90 K
Preparation of ferromagnetic (In,Mn)As with a high Curie temperature of 90 K
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DOI：
10.1063/1.2236210
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发表时间：
2006-07
影响因子：
4
通讯作者：
T. Schallenberg;H. Munekata
中科院分区：
文献类型：
--
作者：
T. Schallenberg;H. Munekata
作者发现，使用相对较高的 V/III 光束通量比通过分子束外延生长的退火 (In,Mn)As 外延层的居里温度高达 90K。磁化数据表明，增加As束通量会导致有效Mn含量增加，载流子传输数据表明，随着生长后的低温退火，空穴浓度从1019cm−3范围增加到1020cm−3范围。在晶格匹配的 (In,Mn)As∕Al(As,Sb) 样品中获得了最高居里温度。霍尔效应和磁光极克尔旋转测量都证实高居里温度是由空穴介导的铁磁性造成的。
The authors found high Curie temperatures of up to 90K in annealed (In,Mn)As epilayers grown by molecular beam epitaxy using a relatively high V/III beam flux ratio. Magnetization data suggest that increasing the As beam flux results in an increase in the effective Mn content, and the carrier transport data indicate an increase in the hole concentration from a 1019to1020cm−3 range with low-temperature annealing after growth. The highest Curie temperature was obtained in lattice matched (In,Mn)As∕Al(As,Sb) samples. Both Hall effect and magneto-optical polar Kerr rotation measurements confirm that the high Curie temperature is due to hole-mediated ferromagnetism.