High-temperature GaN/SiC heterojunction bipolar transistor with high gain
High-temperature GaN/SiC heterojunction bipolar transistor with high gain
复制标题
高增益高温GaN/SiC异质结双极晶体管
DOI：
10.1109/iedm.1994.383385
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发表时间：
1994
期刊：
影响因子：
--
通讯作者：
B. van Zeghbroeck
中科院分区：
文献类型：
--
作者：
J. Pankove;S. Chang;H.C. Lee;R. Molnar;T. Moustakas;B. van Zeghbroeck
研制了一种新型高温异质结双极晶体管(HBT)，其电流增益高达10万。这种异质结双极晶体管采用GaN作为发射极，用碳化硅作为基极和集电极。器件表现出接近理想的电流-电压特性，表现为其高电流增益以及没有任何可观察到的早期效应，但在10V以上的电压下的高泄漏电流除外。高温操作已被证明高达260/spl deg/C，输出劣化最小，除了泄漏电流增加。
A new high temperature heterojunction bipolar transistor (HBT) with a current gain as high as 100,000 has been fabricated. This HBT utilizes GaN for the emitter and SiC for the base and collector. The devices exhibit near ideal current-voltage characteristics, as demonstrated by their high current gain along with the absence of any observable Early effect, with the exception of high leakage currents at voltages above 10 V. High temperature operation has been demonstrated up to 260/spl deg/C with minimal degradation in output, except for an increase in leakage currents.<<ETX>>