Synthesis and characterization of hafnium oxide and hafnium aluminate ultra-thin films by a sol–gel spin coating process for microelectronic applications
Synthesis and characterization of hafnium oxide and hafnium aluminate ultra-thin films by a sol–gel spin coating process for microelectronic applications
复制标题
用于微电子应用的溶胶-凝胶旋涂工艺合成和表征氧化铪和铝酸铪超薄膜
DOI：
10.1016/j.jnoncrysol.2006.10.041
复制
发表时间：
2007
影响因子：
3.5
通讯作者：
S. Santucci
中科院分区：
文献类型：
--
作者：
A. R. Phani;M. Passacantando;S. Santucci
目前，整个行业都在紧锣密鼓地寻找新的高介电常数(High-k)材料，用于未来几代超大规模集成电路(ULSI)。新的高k材料有许多要求，如高介电常数、热稳定性(400°C或更高)、高机械强度以及与邻近层的良好附着力。氧化物尖晶石包括一大类结构上相关的化合物，其中许多具有相当大的技术意义。尖晶石表现出广泛的电子和磁性，特别是含有尖晶石的镍、氢、钴。本研究采用一种简单、经济的溶胶-凝胶旋涂法制备了无裂纹、致密的纯HfO2和Al2HfO5超薄膜。报道了在600℃时形成单斜晶系HfO2相，在800℃时完全形成单相Al2HfO5相。经测量，HfO2薄膜的成分为70at.%，HfO2为30at.%，Al2HfO5薄膜为22at.%，Hf为12at.%，O为66at.%，接近HfO2和Al2HfO5薄膜的化学计量比。
Currently there are intense industry-wide efforts in searching for new high dielectric constant (high-k) materials for use in future generations of ultra-large scale integrated circuits (ULSI). There are number of requirements for the new high-k materials, such as high dielectric constant, thermal stability (400°C or higher), high mechanical strength, and good adhesion to neighboring layers. Oxide spinels comprise a very large group of structurally related compounds many of which are of considerable technological significance. Spinels exhibit a wide range of electronic and magnetic properties in particular nickel, hafnium, cobalt, containing spinels. In the present investigation, crack free, dense polycrystalline monoclinic structure of pure HfO2, and Al2HfO5ultra-thin films have been prepared by a simple and cost effective sol–gel spin coating method. The formation of the monoclinic HfO2phase at 600°C and complete formation of the single phase Al2HfO5at 800°C has been reported. The composition of the annealed films has been measured and found to be 70at.% of O, 30at.% of Hf for HfO2and 22at.% of Al, 12at.% of Hf and 66at.% of O for Al2HfO5films, which are close to the stoichiometry of the HfO2and Al2HfO5thin films.