Temperature dependent charge transport in ferroelectrically gated graphene far from the Dirac point
Temperature dependent charge transport in ferroelectrically gated graphene far from the Dirac point
复制标题
DOI：
10.1063/5.0096776
复制
发表时间：
2022-07
期刊：
影响因子：
1.6
通讯作者：
Kelotchi S. Figueroa;N. Zimbovskaya;N. Pinto;C. Wen;A. T. Johnson
中科院分区：
文献类型：
--
作者：
Kelotchi S. Figueroa;N. Zimbovskaya;N. Pinto;C. Wen;A. T. Johnson
在300 K < T < 350 K温度范围内研究了铁电栅石墨烯远离狄拉克点（DP）的电荷输运.随着远离DP，观察到电导率[σ（T）]的非单调/单调/非单调行为。随着栅极极化的增加，额外的杂质电荷得到补偿，这减少了电荷散射。未补偿电荷掺杂的石墨烯和σ（T）随着T的增加而单调增加。然而，远离DP，极化达到饱和，这导致更低的杂质电荷散射。载流子浓度增加，σ（T）的非单调响应，这归因于声子散射。提出了一个结合杂质电荷和声子散射导电机制的理论模型。顶栅可极化FE提供了一种通过杂质电荷的受控补偿来研究石墨烯中的电荷传输的新方法，并且在该过程中揭示了先前在SiO2背栅石墨烯器件中未看到的σ（T）的非单调行为。
Charge transport in ferroelectric (FE) gated graphene far from the Dirac point (DP) was studied in the temperature range 300 K < T < 350 K. A non-monotonic/monotonic/non-monotonic behavior in the conductivity [σ(T)] was observed as one moved away from the DP. As the gate polarization increased, additional impurity charges were compensated, which reduced charge scattering. The uncompensated charges doped graphene and σ(T) switched to a monotonic increase with increasing T. However, far from the DP, the polarization reached saturation, which resulted in still lower impurity charge scattering. The carrier concentration increased, and a non-monotonic response in σ(T) reappeared, which was attributed to phonon scattering. A theoretical model is presented that combined impurity charge and phonon scattering conduction mechanisms. The top gate polarizable FE provided a novel approach to investigate charge transport in graphene via controlled compensation of impurity charges, and in the process revealed non-monotonic behavior in σ(T) not previously seen in SiO2 back gated graphene devices.