The AC Conductivity of Liquid‐Phase‐Sintered Silicon Carbide
The AC Conductivity of Liquid‐Phase‐Sintered Silicon Carbide
复制标题
液相烧结碳化硅的交流电导率
DOI：
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发表时间：
2007
期刊：
影响因子：
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通讯作者：
M. Herrmann
中科院分区：
文献类型：
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作者：
G. Sauti;A. Can;D. McLachlan;M. Herrmann
液相烧结碳化硅（SiC）陶瓷的交流电导率、复介电常数和阻抗谱分析表明，该体系的主要实验观测结果是由多组分晶界相引起的，而不是由SiC晶粒引起的。从阻抗谱中得出的元件电导率的温度依赖性与exp[−(T0/T)1/4]成正比，而与exp[−C/T]不成正比，证实了这一点。某些晶界的电学性质也与激发电压有关。将电学结果（也被发现依赖于制备方法和热处理）与Rietveld分析相结合，可以推断出模型的晶界组成。
Analysis of the AC conductivity, complex dielectric constant, and the resulting immittance spectra of liquid-phase-sintered silicon carbide (SiC) ceramics showed that for this system, the dominant experimental observations are due to a multicomponent grain-boundary phase and not due to SiC grains. This is confirmed by noting that the temperature dependence of the conductivity of the components, derived from the impedance spectra, is proportional to exp[−(T0/T)1/4] and not to exp[−C/T]. The electrical properties of some of the grain boundaries are also found to be excitation voltage dependent. Combining the electrical results, which are also found to depend on the method of preparation and heat treatment, with a Rietveld analysis allows the composition of the grain boundaries of the models to be deduced.