The Effect of Semiconductor Morphology on the Spatial Resolution of ZnO Based Light-Addressable Potentiometric Sensors
The Effect of Semiconductor Morphology on the Spatial Resolution of ZnO Based Light-Addressable Potentiometric Sensors
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DOI：
10.3390/proceedings2130917
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发表时间：
2018-11
期刊：
影响因子：
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通讯作者：
Ying Tu;Jianwei Li;De-Wen Zhang;J. Briscoe;S. Krause
中科院分区：
文献类型：
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作者：
Ying Tu;Jianwei Li;De-Wen Zhang;J. Briscoe;S. Krause
光寻址电位传感器 (LAPS) 可测量电解质-绝缘体-半导体 (EIS) 以及最近电解质-半导体结构的交流光电流，以生成化学或生物分析物、电位和阻抗的时空图像。 LAPS 最重要的属性之一是空间分辨率，它决定了 LAPS 图像中可以解析的最小特征。在这项工作中，探索了纳米结构 ZnO 在 LAPS 中的应用。使用 LAPS 装置研究了 ZnO 形貌对空间分辨率的影响。通过气溶胶辅助化学气相沉积 (AACVD) 生产的 ZnO 薄膜实现了 2 µm 的最佳分辨率。
Light-addressable potentiometric sensors (LAPS) measure ac photocurrent at electrolyte-insulator-semiconductor (EIS) and, more recently, electrolyte-semiconductor structures to produce spatiotemporal images of chemical or biological analytes, electrical potentials and impedance. One of the most important properties for LAPS is spatial resolution, which determines the smallest features that can be resolved in LAPS images. In this work, the use of nanostructured ZnO for LAPS was explored. The effect of ZnO morphology on the spatial resolution was studied with a LAPS setup. The best resolution of 2 µm was achieved in ZnO films produced by aerosol-assisted chemical vapour deposition (AACVD).