Radiation-induced zero-resistance states: Possible dressed electronic structure effects
Radiation-induced zero-resistance states: Possible dressed electronic structure effects
复制标题
DOI：
10.1103/physrevb.70.075314
复制
发表时间：
2003-05
影响因子：
3.7
通讯作者：
P. Rivera;P. A. Schulz
中科院分区：
文献类型：
--
作者：
P. Rivera;P. A. Schulz
最近的结果表明，在磁场和微波交叉作用下，二维电子气中的磁电阻出现了一类新的振荡现象，这表明存在一种新的零电阻态。我们考虑的角度来看，由于在平面内的线性极化交流场的光子打扮的电子结构的问题。修饰的电子结构包括辐射引起的间隙，已被忽视到目前为止，并可能发挥作用，最近观察到的横向磁阻振荡的开放。
Recent results on magnetoresistance in a two-dimensional electron gas under crossed magnetic and microwave fields show a new class of oscillations, suggesting a new kind of zero-resistance states. We consider the problem from the point of view of the electronic structure dressed by photons due to a in-plane linearly polarized ac field. The dressed electronic structure includes opening of radiation induced gaps that have been overlooked so far and could play a role in the recently observed oscillations in the transverse magnetoresistance.