UHV-CVD growth of high quality GeSn using SnCl4: from material growth development to prototype devices
UHV-CVD growth of high quality GeSn using SnCl4: from material growth development to prototype devices
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DOI：
10.1364/ome.9.003277
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发表时间：
2019-08-01
影响因子：
2.8
通讯作者：
Yu, Shui-Qing
中科院分区：
文献类型：
--
作者：
Grant, Perry C.;Dou, Wei;Yu, Shui-Qing
对 IV 族合金 GeSn 外延的持续关注主要是由于对可单片集成在 Si 上用于中红外 Si 光子学的高效光源的需求所驱动。对于GeSn的化学气相沉积，由于材料的亚稳态性质需要非平衡生长条件，因此探索生长窗口从一开始就很困难。在这项工作中，我们展示了一种获得高品质、高水平 Sn 掺入的 GeSn 的有效途径。使用 GeH4 和 SnCl4 作为前驱体，通过超高真空化学气相沉积在 Ge 缓冲 Si 上生长 GeSn 薄膜。研究了 SnCl4 流量分数和生长温度对 Sn 掺入和材料质量的影响。探索了不同的生长方式，形成了低温下的优化方式，抑制了锡的沉淀，从而增加了锡的掺入量。原型GeSn光电导体是用典型样品制造的，显示了有前景的器件应用。 (C) 2019 年美国光学学会根据 OSA 开放获取出版协议条款
The persistent interest of the epitaxy of group IV alloy GeSn is mainly driven by the demand for an efficient light source that could be monolithically integrated on Si for mid-infrared Si photonics. For chemical vapor deposition of GeSn, the exploration of the growth window is difficult from the beginning due to the metastable nature of the material requiring non-equilibrium growth condition. In this work, we demonstrated an effective pathway to achieve high quality GeSn with high levels of Sn incorporation. The GeSn films were grown on Ge-buffered Si via ultra-high vacuum chemical vapor deposition using GeH4 and SnCl4 as the precursor. The influence of both SnCl4 flow fraction and growth temperature on the Sn incorporation and material quality were investigated. Different growth regimes were explored leading to an optimized regime at low temperature which suppressed the Sn precipitation allowing for increased Sn incorporation. The prototype GeSn photoconductors were fabricated with typical samples, which show the promising device applications. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement