Simulation study of device physics and design of GeOI TFET with PNN structure and buried layer for high performance
Simulation study of device physics and design of GeOI TFET with PNN structure and buried layer for high performance
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DOI：
10.1088/1674-1056/ab99b5
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发表时间：
2020-06
影响因子：
1.7
通讯作者：
Bin Wang;Sheng Hu;Yue Feng;Pengyuan Li;Huiyong Hu;Bin Shu
中科院分区：
文献类型：
--
作者：
Bin Wang;Sheng Hu;Yue Feng;Pengyuan Li;Huiyong Hu;Bin Shu
阈值电压大、导通电流小是传统隧道场效应晶体管的主要局限性。本文提出了一种基于部分耗尽型GeOI （PD-GeOI）衬底的新型栅极控制P+ N+ N+结构的TFET。通过在P+ N+ N+结构下引入埋地P+掺杂层（BP层），该器件表现为双隧穿线器件，可被BP结关断，从而获得高导通电流和低阈值电压。仿真结果表明，该晶体管的导通电流密度可达3.4× 10−4 A/μm，平均亚阈值摆幅（SS）为55 mV/ 10年。此外，延长通道和埋埋P+层都可以优化I - on和SS。TTP TFET的断态电流密度为4.4× 10−10 A/μm，阈值电压为0.13 V，表现出优于普通锗基TFET的性能。在此基础上，对这种新型结构的物理特性和器件设计进行了详细的探讨。
Large threshold voltage and small on-state current are the main limitations of the normal tunneling field effect transistor (TFET). In this paper, a novel TFET with gate-controlled P+ N+ N+ structure based on partially depleted GeOI (PD-GeOI) substrate is proposed. With the buried P+-doped layer (BP layer) introduced under P+ N+ N+ structure, the proposed device behaves as a two-tunneling line device and can be shut off by the BP junction, resulting in a high on-state current and low threshold voltage. Simulation results show that the on-state current density I on of the proposed TFET can be as large as 3.4× 10− 4 A/μm, and the average subthreshold swing (SS) is 55 mV/decade. Moreover, both of I on and SS can be optimized by lengthening channel and buried P+ layer. The off-state current density of TTP TFET is 4.4× 10− 10 A/μm, and the threshold voltage is 0.13 V, showing better performance than normal germanium-based TFET. Furthermore, the physics and device design of this novel structure are explored in detail.