Thionation Enhances the Electron Mobility of Perylene Diimide for High Performance n‐Channel Organic Field Effect Transistors

Thionation Enhances the Electron Mobility of Perylene Diimide for High Performance n‐Channel Organic Field Effect Transistors
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DOI:
10.1002/adfm.201500837
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发表时间:
2015-06
影响因子:
19
通讯作者:
A. J. Tilley;Chang Guo;Mark B. Miltenburg;Tyler B. Schon;Han Yan;Yuning Li;D. Seferos
A. J. Tilley;Chang Guo;Mark B. Miltenburg;Tyler B. Schon;Han Yan;Yuning Li;D. Seferos
中科院分区:
材料科学1区
文献类型:
--
作者:
A. J. Tilley;Chang Guo;Mark B. Miltenburg;Tyler B. Schon;Han Yan;Yuning Li;D. Seferos

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二萘嵌苯二酰亚胺(PDI)是研究最广泛的n型材料之一,在有机光伏器件中作为电子受体和在n沟道有机场效应晶体管中作为电子传输材料显示出巨大的前景。在用于增加PDI的电子迁移率的成熟的化学修饰策略中,用硫取代酰亚胺氧原子(称为硫化)在很大程度上仍未被探索。在这项工作中,它表明,硫化是一种非常有效的手段,提高电子迁移率的双-N-烷基化的PDI衍生物。连续的氧-硫取代增加了电子迁移率,使得完全硫化的衍生物(S4)具有0.16 cm 2 V-1 s-1的平均迁移率。这是两个数量级大于nonthionated母体化合物(P),并实现了溶液沉积,而没有热或溶剂蒸气退火。结合原子力显微镜和2D广角X射线散射实验,以及电荷传输效率的理论模型,用于解释电子迁移率和硫化度之间观察到的强正相关性。这项工作建立了硫化作为一种非常有效的手段,提高电子迁移率的PDI,并提供了动机的发展硫化的PDI衍生物的有机电子应用。
Perylene diimides (PDIs) are one of the most widely studied n‐type materials, showing great promise as electron acceptors in organic photovoltaic devices and as electron transport materials in n‐channel organic field effect transistors. Amongst the well‐established chemical modification strategies for increasing the electron mobility of PDI, substitution of the imide oxygen atoms with sulfur, known as thionation, has remained largely unexplored. In this work, it is demonstrated that thionation is a highly effective means of enhancing the electron mobility of a bis‐N‐alkylated PDI derivative. Successive oxygen–sulfur substitution increases the electron mobility such that the fully thionated derivative (S4) has an average mobility of 0.16 cm2 V−1 s−1. This is two orders of magnitude larger than the nonthionated parent compound (P), and is achieved by solution deposition and without thermal or solvent vapor annealing. A combination of atomic force microscopy and 2D wide angle X‐ray scattering experiments, together with theoretical modeling of charge transport efficiency, is used to explain the strong positive correlation observed between electron mobility and degree of thionation. This work establishes thionation as a highly effective means of enhancing the electron mobility of PDI, and provides motivation for the development of thionated PDI derivatives for organic electronics applications.