Exploiting Read/Write Asymmetry to Achieve Opportunistic SRAM Voltage Switching in Dual-Supply Near-Threshold Processors
Exploiting Read/Write Asymmetry to Achieve Opportunistic SRAM Voltage Switching in Dual-Supply Near-Threshold Processors
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DOI：
10.3390/jlpea8030028
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发表时间：
2018-06
影响因子：
2.1
通讯作者：
Yunfei Gu;Dengxue Yan;Vaibhav Verma;Pai Wang;Mircea R. Stan;Xuan Zhang
中科院分区：
文献类型：
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作者：
Yunfei Gu;Dengxue Yan;Vaibhav Verma;Pai Wang;Mircea R. Stan;Xuan Zhang
节能微处理器对于广泛的应用是必不可少的。虽然近阈值计算是一种很有前途的提高能源效率的技术，但逻辑核心和片上存储器的最佳供应需求是相互冲突的。本文对6T SRAM进行了静态可靠性分析，发现了不同尺寸配置和读写操作之间不对称的最小电压要求之间的差异。我们通过提出带有写聚合缓冲器的机会双电源开关方案，在配备电压提升能力的近阈值处理器中利用这种不对称特性。结果表明，该技术提高了21.45%以上的能源效率，性能加速约为10.19%。
Energy-efficient microprocessors are essential for a wide range of applications. While near-threshold computing is a promising technique to improve energy efficiency, optimal supply demands from logic core and on-chip memory are conflicting. In this paper, we perform static reliability analysis of 6T SRAM and discover the variance among different sizing configuration and asymmetric minimum voltage requirements between read and write operations. We leverage this asymmetric property in near-threshold processors equipped with voltage boosting capability by proposing an opportunistic dual-supply switching scheme with a write aggregation buffer. Our results show that proposed technique improves energy efficiency by more than 21.45% with approximate 10.19% performance speed-up.